Kaneka 29.1%

Siliconheterojunctionsolarcellwithinterdigitatedbackcontactsforaphotoconversione??ciencyover26%

KuntaYoshikawa*,HayatoKawasaki,WataruYoshida,ToruIrie,KatsunoriKonishi,KunihiroNakano,ToshihikoUto,DaisukeAdachi,MasanoriKanematsu,HisashiUzuandKenjiYamamoto

Improvingthephotoconversione??ciencyofsiliconsolarcellsiscrucialtofurtherthedeploymentofrenewableelectricity.Essentialdevicepropertiessuchaslifetime,seriesresistanceandopticalpropertiesmustbeimprovedsimultaneouslytoreducerecombination,resistiveandopticallosses.Here,weuseindustriallycompatibleprocessestofabricatelarge-areasiliconsolarcellscombininginterdigitatedbackcontactsandanamorphoussilicon/crystallinesiliconheterojunction.Thephotoconversione??ciencyisover26%witha180.4cm2designatedarea,whichisanimprovementof2.7%relativetothepreviousrecorde??ciencyof25.6%.Thecellwasanalysedtocharacterizelifetime,quantume??ciency,andseriesresistance,whichareessentialelementsforconversione??ciency.Finally,alossanalysispinpointsapathtoapproachthetheoreticalconversione??ciencylimitofSisolarcells,29.1%.

oday’senergyproductionstronglydependsonfossilfuelssuchasoil,naturalgasandcoalwithlimitedminableyears1,whiletheworldenergydemandispredictedtoincreaseinthefuture2.Asarenewableenergysource,solarcellsareoneofthemostwidelyusedtechnologiesutilizingsunlighttogenerateelectricity,demonstratedwithstronggrowthofphotovoltaicmoduleinstallation3,andgridparityhasalreadybeenachievedinmanycountries4.Accordingtoseveralscenarios,bytheyear2050,photovoltaicelectricityshouldcovermorethana20%shareoftheglobalprimaryenergydemands5.Indeed,theperformanceofindustrialsolarcellshasimprovedcontinuouslytogetherwiththecostandreliability6.Suchprogressindicatestheremarkablematurationofthetechnology.

Siliconhasanearlyoptimumbandgapforsunlightabsorptionandsiliconsolarcellsreachahighphotoconversione?ciencyduetothegoodmaterialqualityandwidespreadtechnologicalknow-how.Moreover,Sisolarcellshaveseveralstrongadvantagesessentialforphotovoltaics,suchasabundantrawmaterialsupply,lowtoxicity,lowcostandscalabletechnologiesforcellandmodulefabrication.Theseadvantagesareattheoriginofthesharpincreaseinthenumberofphotovoltaicinstallationsintheworld,andmostprobablythesametrendwillcontinueinthefuture.Improvingthee?ciencyofSisolarcellsiskeytofurtherreducearea-relatedcostsandtoascertainthepositionofphotovoltaicsasarenewablesourceofelectricity.

Inthelastyears,severalhighconversione?ciencieshavebeenreported7,8.Therearemainlytwotechnologiesresponsibleforthisprogress:first,thepassivatedcontacttechnologyincludingheterojunctions(HJ);andsecond,theinterdigitatedbackcontact(IBC)technology.TheHJtechnologyusinganamorphousSi(a-Si)layertopassivatethecrystallineSi(c-Si)surfacewasfirstreportedbySanyo(nowPanasonic)andfollowingworkwasreportedin20009.TheveryoriginoftheIBCdesignwasfirstsuggestedin197710andane?cientsolarcellwasreportedin198411.

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Recently,in2014,thehigheste?ciencyinaSisolarcellof25.6%(144cm2:designatedarea)obtainedbyaHJbackcontactcellwasreported12.AnIBCsolarcellwithpassivatedcontactexhibitedane?ciencyof25.2%(153cm2:totalarea),withthepotentialtoreach0.26%highere?ciencywithdesignatedarea,accordingtotheiredgelossanalysis13.Finally,wehavereporteda25.1%e?ciencytop/rearcontactedHJcell(152cm2:aperturearea)usingaCuelectrode14.Thedefinitionsofthevariousmeasurementareasaregiveninref.15.

Inthispaper,wedemonstrateane?ciencyover26%usingalarge-area(180cm2designatedarea)c-SisolarcellwithanIBCstructurecombinedwithana-Si/c-SiSiHJ,preparedbyindustriallyfeasibletechnologies.Withthisarchitecture,byintegratingbothP+andN+HJcontactstotherearside,itispossibletohavegoodopticalandpassivationpropertiesatthefrontsideofthecell,whichreceiveslight.Wecomparethehigh-e?ciencytechnologiesforSisolarcellsintheliterature,anddiscusstheadvantagesofthetechnologiesusedtoprepareourrecorde?ciencycell.Finally,alossanalysispinpointsapathtoapproachthetheoreticalconversione?ciencylimit16,17ofSisolarcells,29.1%.

Highconversione??ciencyover26%bytheHJ-IBC

Here,wedevelopedaHJ-IBCsolarcellwithaconversione?ciencyof26.3%,whichisarecord-breakinge?ciencyforaSisolarcell.AsshowninFig.1a,thep-typeamorphousSi(p:a-Si)layerandn-typeamorphousSi(n:a-Si)layerarepatternedtocollectholesandelectrons,respectively.Thefrontsideiscoveredbyana-Sipassivationlayerandadielectricanti-reflection(AR)layer.Theincidentlightgeneratescarriers,whicharecollectedbythepatterneda-Silayersandelectrodes.TheHJ-IBCcellwasfabricatedusingaCzochralskiSiwaferwithathicknessof165μmwithresistivityof～3??cm.Thecurrent–voltage(IV)characteristicshowninFig.1bwascertifiedbytheFraunhoferInstituteforSolarEnergySystems(ISE)withdesignatedarea(180cm2)measurement

Photovoltaic&ThinFilmDeviceResearchLaboratories,Kanekacorporation,5-1-1Torikai-Nishi,Settsu,Osaka566-0072,Japan.*e-mail:Kunta.yoshikawa@kaneka.co.jp

NATUREENERGY2,17032(2017)|DOI:10.1038/nenergy.2017.32|i5h4u.cn/natureenergy

? 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved.

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